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參數(shù)資料
| 型號： | GF2402 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 1.14A I(D) | SOT-23 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 1.14AI（四）| SOT - 23封裝 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | GF2402 |
GF2402
Vishay Semiconductor
www.vishay.com
2
Document Number #####
26-Nov-01
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 10
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
12V
V
DS
= 16V, V
GS
= 0V
V
DS
=16V, V
GS
=0V, T
J
=125
°
C
V
DS
≥
5V, V
GS
= 4.5V,
V
GS
= 4.5V, I
D
= 0.6A
V
G
S
=
2.5V, I
D
= 0.6A
V
DS
= 16V, I
D
= 0.6A
20
0.6
–
–
–
4.0
–
–
–
–
–
–
–
–
–
–
—
V
V
nA
μ
A
μ
A
A
±
100
1.0
10
–
200
300
–
Zero Gate Voltage Drain Current
I
DSS
On-State Drain Current
(1)
I
D(on)
Drain-Source On-State Resistance
(1)
R
DS(on)
160
235
3.0
m
Forward Transconductance
(1)
Dynamic
Total Gate Charge
(1)
Gate-Source Charge
(1)
Gate-Drain Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Maximum Diode Forward Current
Maximum Pulsed Diode Forward Current
(2)
Diode Forward Voltage
(1)
g
fs
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
1.8
0.35
0.55
3.5
7.5
19
30
120
20
9.0
4.0
–
–
10
18
40
35
–
–
–
V
DD
= 20V, V
GS
= 4.5V
I
D
= 1.0A
nC
V
DD
= 20V, R
L
= 20
I
D
≈
1A, V
GEN
= 8V
R
G
= 6
ns
V
GS
= 0V
V
DS
= 16V
f = 1.0MH
Z
pF
I
S
I
SM
V
SD
T
A
= 25
°
C
—
I
S
= 0.5A, V
GS
= 0V
—
—
–
—
—
0.77
1.05
4.2
1.0
A
A
V
Note:
(1) Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%
(2) Pulse width limited by maximum junction temperature
G
D
S
V
IN
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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