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參數(shù)資料
| 型號： | GF9926D |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 6A條（丁）|芯片 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | GF9926D |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
8V
20
–
–
V
Gate Threshold Voltage
V
GS(th)
0.6
–
–
V
Gate-Body Leakage
I
GSS
–
–
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
–
–
1
μ
A
V
DS
=20V, V
GS
=0V, T
J
=55
°
C
–
–
5
On-State Drain Current
(2)
I
D(on)
V
DS
≥
5V, V
GS
= 4.5V
20
–
–
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 4.5V, I
D
= 6A
–
22
30
m
V
GS
= 2.5V, I
D
= 5.2A
–
28
40
Forward Transconductance
(2)
g
fs
V
DS
= 10V, I
D
= 6A
–
24
–
S
Dynamic
Total Gate Charge
Q
g
–
13
40
Gate-Source Charge
Q
gs
V
DS
= 10V, V
GS
= 4.5V
–
2.2
–
nC
Gate-Drain Charge
Q
gd
I
D
= 6A
–
3
–
Turn-On Delay Time
t
d(on)
–
11
60
Rise Time
t
r
V
DD
= 10V, R
L
= 10
I
D
≈
1A, V
GEN
= 4.5V
R
G
= 6
–
15
140
Turn-Off Delay Time
t
d(off)
–
43
140
ns
Fall Time
t
f
–
22
60
Input Capacitance
C
iss
V
GS
= 0V
–
1240
–
Output Capacitance
C
oss
V
DS
= 10V
–
200
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
120
–
Source-Drain Diode
Diode Forward Voltage
(2)
V
SD
I
S
= 1.7A, V
GS
= 0V
–
0.7
1.3
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7A, di/dt = 100A/
μ
s
–
–
100
ns
Notes:
(1) Surface mounted on FR4 board, t
≤
10 sec.
(2) Pulse test; pulse width
≤
300
μ
s,
duty cycle
≤
2%
GF9926
Dual N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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