參數(shù)資料
型號: GF9926D
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | CHIP
中文描述: 晶體管| MOSFET的| N溝道| 20V的五(巴西)直| 6A條(?。﹟芯片
文件頁數(shù): 5/5頁
文件大?。?/td> 98K
代理商: GF9926D
GF9926
Dual N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
Fig. 13
Maximum Safe Operating Area
0.0001 0.001
0.01
0.01
0.001
0.1
0.1
1
1
10
100
I
D
V
DS
-- Drain-Source Voltage (V)
R
Θ
J
I
Pulse Duration (sec.)
Single Pulse
0.01
0.1
0
0.01
0.1
0.1
1
1
10
100
10
100
10
20
30
40
50
1
10
100
Fig. 12
Power vs. Pulse Duration
P
Pulse Duration (sec.)
Single Pulse
R
θ
JA
= 82
°
C/W
T
A
= 25
°
C
V
GS
= 4.5V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25
°
C
R
DS(ON)
Limit
100
μ
s
1ms
10ms
100ms
1s
DC
10s
D = 0.5
0.2
0.01
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
θ
JA
(t) = R
θ
JA(norm)
*R
θ
JA
3. R
θ
JA
= 82
°
C/W (on 1-in
2
2 oz. Cu. FR-4)
4. T
J
- T
A
= P
DM
* R
θ
JA
(t)
0.05
0.02
Fig. 11
Thermal Impedance
27
28
30
31
29
Fig. 10
Breakdown Voltage vs.
Junction Temperature
I
D
= 250
μ
A
B
D
B
T
J
-- Junction Temperature (
°
C)
--
50
--
25
25
50
75
100
125
0
150
相關(guān)PDF資料
PDF描述
GH06505T1A LASER DIODE
GH06507B1A LASER DIODE
GH06507B1B LASER DIODE
GH06507B2A LASER DIODE
GH06507B2B LASER DIODE
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