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參數(shù)資料
| 型號： | GS2008HET/R7 |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 96K |
| 代理商： | GS2008HET/R7 |
PAGE . 1
March 01,2011-REV.01
GS2004HE SERIES
FEATURES
For surface mounted applications
Low profile package
Ideal for automated placement
Glass Passivated Chip Junction
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOD-123HE, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Approx. Weight: 0.0001 ounce, 0.0042 gram
Standard Packaging : 8mm tape (EIA-481)
Polarity : Color band denotes cathode end
SURFACE MOUNT RECTIFIER
NOTES :
1. Measured at 1 MHz and applied Vr = 4.0 volts.
2. 8.0 mm2 ( .013mm thick ) land areas.
VOLTAGE
400 to 800 Volts
2 Amperes
CURRENT
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARA ME TE R
S YMB OL
GS2 00 4HE
GS 200 6HE
GS2 00 8HE
UNITS
Ma rki ng C od e
-
4H
6 H
8 H
-
Ma xi mum Recurrent P e ak Reverse Voltag e
V
RRM
400
600
800
V
Ma xi mum RMS Vo lta ge
V
RMS
280
420
560
V
Ma xi mum D C Blocki ng Volta ge
V
DC
400
600
800
V
Ma xi mum A ve rag e Forwa rd C urrenth at T
L= 100
O
CI
F(AV)
2.0
A
P eak F orwa rd Surg e C urre nt : 8.3ms si ngle ha lf si ne-wave
superi mposed on rated load(JE DE C method)
I
FS M
50
A
Ma xi mum Forward Voltage at 2.0A
V
F
1.1
V
Ma xi mum D C Re ve rse C urre nt at Rated
DC Blocki ng Volta ge
T
J=2 5
O
C
T
J=1 2 5
O
C
I
R
1.0
50
A
Typi ca l Juncti on capa ci ta nce (No te 1)
C
J
12
pF
Typi ca l Thermal Resi sta nce (Note 2 )
R
JL
10
O
C / W
Op erati ng a nd S torag e Tempe rature Ra ng e
T
J,TSTG
-55 to +1 50
O
C
0.
046(
1.
15)
0.
033(
0.
85)
0.114(2.90)
0.106(2.70)
0.012(0.30)
0.007(0.20)
0.154(3.90)
0.137(3.50)
0.091(2.30)
0.074(1.90)
0.048(1.20)
0.031(0.80)
0.040(1.00)
0.031(0.80)
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