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參數(shù)資料
| 型號： | GS71116 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 1Mb（64K x 16Bit）Asynchronous SRAM(1M位（64K x 16位）異步靜態(tài)RAM) |
| 中文描述： | 1兆（64K的× 16）異步SRAM（100萬位（64K的× 16位）異步靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 220K |
| 代理商： | GS71116 |
Rev: 1.06 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
1/15
1999, Giga Semconductor, Inc.
M
GS71116TP/J/U
64K x 16
1Mb Asynchronous SRAM
10, 12, 15ns
3.3V V
DD
Center V
DD
& V
SS
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
Features
Fast access time: 10, 12, 15ns
CMOS low power operation: 100/85/70 mA at mn. cycle time.
Single 3.3V ± 0.3V power supply
All inputs and outputs are TTL compatible
Byte control
Fully static operation
Industrial Temperature Option: -40° to 85°C
Package line up
J: 400ml, 44 pin SOJ package
TP: 400ml, 44 pin TSOP Type II package
U: 6 mmx 8 mmFine Pitch Ball Grid Array package
Description
The GS71116 is a high speed CMOS static RAMorganized as
65,536-words by 16-bits. Static design elimnates the need for exter-
nal clocks or timng strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS71116 is avail-
able in a 6x8 mmFine Pitch BGA package as well as in 400 ml SOJ
and 400 ml TSOP Type-II packages.
Pin Descriptions
Symbol
A
0
to A
15
SOJ 64K x 16 Pin Configuration
Fine Pitch BGA 64K x 16 Bump Configuration
6mmx 8mm 0.75mmBump Pitch
Top View
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3V power supply
Ground
No connect
DQ
1
to DQ
16
CE
LB
UB
WE
OE
V
DD
V
SS
NC
1
2
3
4
5
6
A
LB
OE
A
0
A
1
A
2
NC
B
DQ
16
UB
A
3
A
4
CE
DQ
1
C
DQ
14
DQ
15
A
5
A
6
DQ
2
DQ
3
D
V
SS
DQ
13
NC
A
7
DQ
4
V
DD
E
V
DD
DQ
12
NC
NC
DQ
5
V
SS
F
DQ
11
DQ
10
A
8
A
9
DQ
7
DQ
6
G
DQ
9
NC
A
10
A
11
WE
DQ
8
H
NC
A
12
A
13
A
14
A
15
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
DQ
3
DQ
4
V
DD
V
SS
DQ
5
DQ6
DQ7
DQ
8
WE
A
15
A
14
A
13
A
12
NC
A
5
A
6
A
7
OE
UB
LB
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
V
DD
DQ
12
DQ
11
DQ
10
DQ
9
NC
A
8
A
9
A
10
A
11
NC
Top view
44 pin
SOJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS71208 | 1Mb（128K x 8Bit）Asynchronous SRAM(1M位（128K x 8位）異步靜態(tài)RAM) |
| GS72108J-15 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| GS72108J-15I | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| GS72108J-8 | TV 4C 4#12 SKT RECP |
| GS72108J-8I | TV 5C 5#16 PIN RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS71116AGP-10 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 1MBIT 64KX16 10NS 44TSOP-II - Trays |
| GS71116AGP-10E | 制造商:GSI Technology 功能描述:GS71116AGP-10E - Trays |
| GS71116AGP-10I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 1MBIT 64KX16 10NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:1MB ASYNCH SRAM 64K X 16 10NS SMD |
| GS71116AGP-12 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 1MBIT 64KX16 12NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:1MB ASYNCH SRAM 64K X 16 12NS SMD 制造商:GSI Technology 功能描述:1MB ASYNCH SRAM 64K X 16, 12NS, SMD 制造商:GSI Technology 功能描述:1MB ASYNCH SRAM 64K X 16, 12NS, SMD; Memory Size:1Mbit; Memory Configuration:64K x 16bit; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-2; No. of Pins:44; Access Time:12ns; Operating Temperature Min:0C; ;RoHS Compliant: Yes |
| GS71116AGP-12E | 制造商:GSI Technology 功能描述:GS71116AGP-12E - Trays |
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