參數資料
型號: GS71208TP
廠商: GSI TECHNOLOGY
英文描述: 128K x 8 1Mb Asynchronous SRAM
中文描述: 128K的× 8最快1Mb異步SRAM
文件頁數: 3/11頁
文件大小: 394K
代理商: GS71208TP
Rev: 1.03 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3/11
1999, Giga Semiconductor, Inc.
GS71208TP
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Note:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than
2 V and not exceed 20 ns.
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
0.5 to +4.6
V
Input Voltage
V
IN
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
55 to 150
o
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
V
DD
+0.3
V
Input Low Voltage
V
IL
0.3
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
40
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
相關PDF資料
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GS71208TP-8 128K x 8 1Mb Asynchronous SRAM
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相關代理商/技術參數
參數描述
GS71208TP-8 制造商:GSI 制造商全稱:GSI Technology 功能描述:128K x 8 1Mb Asynchronous SRAM
GS71216TP 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 16 1Mb Asynchronous SRAM
GS71216TP-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM
GS71216TP-10I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM
GS71216TP-10IT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM