參數(shù)資料
型號: GS73024AB
廠商: GSI TECHNOLOGY
英文描述: Asynchronous SRAM
中文描述: 異步SRAM
文件頁數(shù): 3/12頁
文件大?。?/td> 452K
代理商: GS73024AB
Truth Table
CE
OE
WE
Mode
DQ0 to DQ23
V
DD
Current
H
X
X
Not selected
High Z
ISB1, ISB2
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
L
H
H
Output disable
High Z
GS73024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2005
3/12
2003, GSI Technology
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable BGA power dissipation
PD
1.5
W
Storage temperature
T
STG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
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