參數(shù)資料
型號: GS73024AB
廠商: GSI TECHNOLOGY
英文描述: Asynchronous SRAM
中文描述: 異步SRAM
文件頁數(shù): 4/12頁
文件大?。?/td> 452K
代理商: GS73024AB
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
70
o
C
Ambient Temperature,
Industrial Range
T
Ai
–40
85
o
C
GS73024AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 12/2005
4/12
2003, GSI Technology
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
I/O Capacitance
C
OUT
V
OUT
= 0 V
7
pF
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
Output Leakage Current
I
OL
Output High Z,
V
OUT
= 0 to V
DD
–1 uA
1 uA
Output High Voltage
V
OH
I
OH
= –4 mA
2.4
Output Low Voltage
V
OL
I
OL
= +4 mA
0.4 V
相關(guān)PDF資料
PDF描述
GS73024AB-10 Asynchronous SRAM
GS73024AB-10I Asynchronous SRAM
GS73024AB-12 Asynchronous SRAM
GS73024AB-12I Asynchronous SRAM
GS73024AB-8 Asynchronous SRAM
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