參數(shù)資料
型號(hào): GS8162Z72CGC-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 256K X 72 ZBT SRAM, 5.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-209
文件頁(yè)數(shù): 15/27頁(yè)
文件大?。?/td> 771K
代理商: GS8162Z72CGC-250V
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
3.0
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.2
0.4
0.5
ns
Flow Through
Clock Cycle Time
tKC
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
6.5
7.5
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.7
1.7
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
3.0
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
G to output in High-Z
tOHZ
1
3.0
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
GS8162Z72CC-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02a 6/2006
15/27
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
PDF描述
GS8162Z72C 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162ZV72CC-150I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162ZV72CC 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162ZV72CC-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162ZV72CC-200 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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