參數(shù)資料
型號: GS820H32GT-5I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 64K X 32 CACHE SRAM, 12 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 5/23頁
文件大小: 342K
代理商: GS820H32GT-5I
Rev: 1.03 2/2000
13/23
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
D
GS820H32T/Q-150/138/133/117/100/66
AC Electrical Characteristics
Notes:
1. These parameters are sampled and are not 100% tested
2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-150
-138
-133
-117
-100
-66
Unit
Min Max
Min Max Min
Max Min
Max
Pipeline
Clock Cycle Time
tKC
6.6
---
7.25
---
7.5
---
8.5
---
10
12.5
ns
Clock to Output Valid
tKQ
---
3.8
---
4
---
4
---
4.5
5
6
ns
Clock to Output Invalid
tKQX
1.5
---
2
---
2
---
2
---
2
ns
Clock to Output in Low-Z
tLZ1
1.5
---
2
---
2
---
2
---
2
ns
Flow-
Thru
Clock Cycle Time
tKC
10.5
---
15
---
15
---
15
---
15
20
ns
Clock to Output Valid
tKQ
---
9.0
---
9.7
---
10
---
11
12
18
ns
Clock to Output Invalid
tKQX
3
---
3
---
3
---
3
---
3
ns
Clock to Output in Low-Z
tLZ1
3
---
3
---
3
---
3
---
3
ns
Clock HIGH Time
tKH
1.8
---
1.9
---
1.9
---
2
---
3
4
ns
Clock LOW Time
tKL
1.8
---
1.9
---
1.9
---
2
---
3
4
ns
Clock to Output in High-Z
tHZ1
1.5
3.8
1.5
4
1.5
4
1.5
4
5
6
ns
G to Output Valid
tOE
---
3.8
---
4
---
4
---
4
5
6
ns
G to output in Low-Z
tOLZ1
0
---
0
---
0
---
0
---
0
ns
G to output in High-Z
tOHZ1
---
4
---
4
---
4
---
4
5
6
ns
Setup time
tS
1.7
---
2
---
2
---
2
---
2
ns
Hold time
tH
0.5
---
0.5
---
0.5
---
0.5
---
0.5
ns
ZZ setup time
tZZS2
5
---
5
---
5
---
5
---
5
ns
ZZ hold time
tZZH2
1
---
1
---
1
---
1
---
1
ns
ZZ recovery
tZZR
20
---
20
---
20
---
20
---
20
ns
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