參數(shù)資料
型號(hào)： GS8321EV18GE-133T
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
文件頁(yè)數(shù)： 33/33頁(yè)
文件大?。?/td> 1013K
代理商： GS8321EV18GE-133T
Synchronous Truth Table
Operation
Address Used
State
Diagram
Key5
E1
ADSP
ADSC
ADV
W3
DQ4
Deselect Cycle, Power Down
None
X
H
X
L
X
High-Z
Read Cycle, Begin Burst
External
R
L
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
GS8321EV18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
9/33
2003, GSI Technology
相關(guān)PDF資料
PDF描述
GS8321ZV36E-150T 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321EV18GE-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-166I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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