參數(shù)資料
型號(hào)： GS8321ZV36E-150T
廠商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù)： 7/33頁(yè)
文件大小： 1029K
代理商： GS8321ZV36E-150T
GS8321ZV18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
15/33
2003, GSI Technology
Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Capacitance
oC, f = 1 MHZ, VDD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Note:
These parameters are sample tested.
(TA = 25
= 2.5 V)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321ZV36E-166 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 36MBIT 1MX36 8NS/3.5NS 165FBGA - Trays
GS8321ZV36E-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8321ZV36E-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8321ZV36E-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8321ZV36E-225 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAM
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