- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383050 > GS84032 (GSI TECHNOLOGY) 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) PDF資料下載
參數(shù)資料
| 型號(hào)： | GS84032 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 4Mb的（128K的x 32位）同步突發(fā)靜態(tài)存儲(chǔ)器（4分位（128K的× 32位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁(yè)數(shù)： | 19/31頁(yè) |
| 文件大?。?/td> | 627K |
| 代理商： | GS84032 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)
Rev: 2.05 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
19/31
1999, Giga Semiconductor, Inc.
.
GS84018/32/36T/B-180/166/150/100
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-180
-166
-150
-100
Unit
Min
5.5
---
1.5
Max
---
3.2
---
Min
6.0
---
1.5
Max
---
3.5
---
Min
6.7
---
1.5
Max
---
3.8
---
Min
10
---
1.5
Max
---
4.5
---
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
---
1.5
---
1.5
---
1.5
---
ns
Flow-
Thru
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
10.0
---
3.0
---
8.0
---
10.0
---
3.0
---
8.5
---
10.0
---
3.0
---
10.0
---
15.0
---
3.0
---
12.0
---
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
---
3.0
---
3.0
---
3.0
---
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
---
---
1.3
1.5
---
---
1.5
1.7
---
---
2
---
---
ns
ns
2.2
Clock to Output in High-Z
tHZ
1
tOE
1.5
3.2
1.5
3.5
1.5
3.8
1.5
5
ns
G to Output Valid
---
3.2
---
3.5
---
3.8
---
5
ns
G to output in Low-Z
tOLZ
1
0
---
0
---
0
---
0
---
ns
G to output in High-Z
tOHZ
1
tS
tH
---
3.2
---
3.5
---
3.8
---
5
ns
Setup time
Hold time
1.5
0.5
---
---
1.5
0.5
---
---
1.5
0.5
---
---
2.0
0.5
---
---
ns
ns
ZZ setup time
tZZS
2
5
---
5
---
5
---
5
---
ns
ZZ hold time
tZZH
2
tZZR
1
---
1
---
1
---
1
---
ns
ZZ recovery
20
---
20
---
20
---
20
---
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS84036 | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS840E18A | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS840E32A | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS840E36A | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| GS840E18 | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS84032AB-100 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4MBIT 128KX32 12NS/4.5NS 119FBGA - Trays |
| GS84032AB-100I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4MBIT 128KX32 12NS/4.5NS 119FBGA - Trays |
| GS84032AB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4MBIT 128KX32 10NS/3.8NS 119FBGA - Trays |
| GS84032AB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4MBIT 128KX32 10NS/3.8NS 119FBGA - Trays |
| GS84032AB-166 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4MBIT 128KX32 8.5NS/3.5NS 119FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。