參數(shù)資料
型號: GS84036AB-100I
廠商: Electronic Theatre Controls, Inc.
英文描述: 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
中文描述: 256 × 18,128K的× 32,128K的× 36 4Mb的同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 13/31頁
文件大?。?/td> 911K
代理商: GS84036AB-100I
Rev: 1.12 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
13/31
1999, Giga Semiconductor, Inc.
Preliminary
GS84018/32/36AT/B-180/166/150/100
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied Low.
The upper portion of the diagram assumes active use of only the Enable (E
1,
E
2,
E
3
) and Write (B
A
, B
B
, B
C
, B
D
, BW and GW) control inputs
and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write and ADSC control inputs and assumes
ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS84036AB-150 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS84032AT-166 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS84036AT-100 Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
GS84036AT-100I Flasher; Contacts:DPDT; Time Range:0.6 sec. to 60 sec.; Timing Function:Adjustable Recycling; Contact Carrying Power:3W; Supply Voltage:12VDC
GS84018 4Mb(256K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
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