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| 型號： | GS84036AB-100I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| 中文描述： | 256 × 18，128K的× 32，128K的× 36 4Mb的同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 19/31頁 |
| 文件大小： | 911K |
| 代理商： | GS84036AB-100I |
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Rev: 1.12 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
19/31
1999, Giga Semiconductor, Inc.
Preliminary
GS84018/32/36AT/B-180/166/150/100
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-180
-166
-150
-100
Unit
Min
5.5
—
1.5
Max
—
3.0
—
Min
6.0
—
1.5
Max
—
3.5
—
Min
6.7
—
1.5
Max
—
3.8
—
Min
10
—
1.5
Max
—
4.5
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
9.1
—
3.0
—
8.0
—
10.0
—
3.0
—
8.5
—
12.0
—
3.0
—
10.0
—
15.0
—
3.0
—
12.0
—
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
3.2
1.5
3.5
1.5
3.8
1.5
5
ns
G to Output Valid
—
3.2
—
3.5
—
3.8
—
5
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
tS
tH
—
3.2
—
3.5
—
3.8
—
5
ns
Setup time
Hold time
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
2.0
0.5
—
—
ns
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS84036AB-150 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84032AT-166 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS84036AT-100 | Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s |
| GS84036AT-100I | Flasher; Contacts:DPDT; Time Range:0.6 sec. to 60 sec.; Timing Function:Adjustable Recycling; Contact Carrying Power:3W; Supply Voltage:12VDC |
| GS84018 | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS84036AB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 10NS/3.8NS 119FBGA |
| GS84036AB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 10NS/3.8NS 119FBGA - Trays |
| GS84036AB-166 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 8.5NS/3.5NS 119FBGA - Trays |
| GS84036AB-166I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 8.5NS/3.5NS 119FBGA - Trays |
| GS84036AB-180 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 8NS/3NS 119FBGA - Trays |
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