參數(shù)資料
型號(hào)： GS840E36
廠商： GSI TECHNOLOGY
英文描述： 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 4Mb的（128K的x 36Bit）同步突發(fā)靜態(tài)存儲(chǔ)器（4分位（128K的× 36位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器））
文件頁(yè)數(shù)： 15/31頁(yè)
文件大?。?/td> 629K
代理商： GS840E36
Rev: 2.05 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
15/31
1999, Giga Semiconductor, Inc.
.
GS840E18/32/36T/B-180/166/150/100
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Recommended Operating Conditions
Note:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V
≤
VDDQ
≤
2.375V (i.e. 2.5V I/O)
and 3.6V
≤
VDDQ
≤
3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3V and 2.5V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be -2V > Vi < V
DD
+2V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
Description
Value
Unit
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on Clock Input Pin
-0.5 to 4.6
V
-0.5 to V
DD
-0.5 to 6
V
V
Voltage on I/O Pins
-0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
-0.5 to V
DD
+0.5 (
≤
4.6 V max.)
+/- 20
V
Voltage on Other Input Pins
V
Input Current on Any Pin
mA
Output Current on Any I/O Pin
+/- 20
mA
Package Power Dissipation
1.5
W
Storage Temperature
-55 to 125
o
C
Temperature Under Bias
-55 to 125
o
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
T
A
T
A
3.135
3.3
3.6
V
DD
V
I/O Supply Voltage
2.375
2.5
V
1
Input High Voltage
1.7
---
V
DD
+0.3
0.8
V
2
Input Low Voltage
-0.3
---
V
°
C
°
C
2
Ambient Temperature (Commercial Range Versions)
0
25
70
3
Ambient Temperature (Industrial Range Versions)
-40
25
85
3
相關(guān)PDF資料
PDF描述
GS840F18A 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840F32A 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840F36A 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840FH18A 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840FH32A 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS840E36AB-100 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E36AB-100I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E36AB-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E36AB-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E36AB-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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