參數(shù)資料
型號(hào): GS840H18A
廠商: GSI TECHNOLOGY
英文描述: 4Mb(256K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 4Mb的(256 × 18位)同步突發(fā)靜態(tài)存儲(chǔ)器(4分位(256 × 18位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 22/31頁(yè)
文件大?。?/td> 940K
代理商: GS840H18A
Rev: 1.07 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
22/31
1999, Giga Semiconductor, Inc.
Preliminary
GS840H18/32/36AT/B-200/180/166/150/100
Flow Through Read-Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
RD1
WR1
RD2
Q1a
D1a
Q2a
Q2b
Q2c
Q2d
Single Read
Burst Read
tOE
tOHZ
tS tH
tS
tH
tH
tS tH
tS tH
tS tH
tS tH
tKH
ADSC initiated read
DQ
A
–DQ
D
B
A
–B
D
A0–An
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
tS
tH
Hi-Z
Q2a
Burst wrap around to it’s initial state
WR1
E
1
E
3
E
2
tS
tS tH
tS
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
tH
tH
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS840H18AB-100 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays
GS840H18AB-100I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840H18AB-150 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays
GS840H18AB-150I 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays
GS840H18AB-166 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs