參數(shù)資料
型號: GS841E18AT-180
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 18 Sync Cache Tag
中文描述: 256K X 18 CACHE TAG SRAM, 8 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 10/21頁
文件大?。?/td> 421K
代理商: GS841E18AT-180
GS841E18AT/B-180/166/150/130/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
10/21
2001, GSI Technology
Notes:
1.
Junction temperature is a function of SRAM power dissapation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2.
3.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP max
PBGA max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
32
28
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
R
Θ
JA
20
18
°
C/W
1,2
Junction to Case (TOP)
R
Θ
JC
7
4
°
C/W
3
Notes:
1.
Include scope and jig capacitance.
2.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Device is deselected as defined by the Truth Table.
3.
4.
AC Test Conditions
(VDD = 3.135 V–3.6 V, Ta = 0–70
°
C)
Parameter
Conditions
Input high level
V
IH
= 2.3 V
Input low level
V
IL
= 0.2 V
Input slew rate
TR = 1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
DQ
VT = 1.25 V
5
0W
30pF
1
DQ
2.5 V
F
IG
. 1
Output load 1
Output load 2
F
IG
. 2
225W
225W
5pF
1
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