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參數(shù)資料
| 型號(hào)： | GS841E18AT-180 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K x 18 Sync Cache Tag |
| 中文描述： | 256K X 18 CACHE TAG SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大?。?/td> | 421K |
| 代理商： | GS841E18AT-180 |
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GS841E18AT/B-180/166/150/130/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
9/21
2001, GSI Technology
Notes:
1.
2.
3.
4.
X means “don’t care,” H means “l(fā)ogic high,” L means “l(fā)ogic low.”
Write is the logic function of GW, BWE, BW1, BW2. See Byte Write Function table for detail.
CE is defined as CE1=L, CE2=H and CE3=L
All signals are synchronous and are sampled by CLK except OE and MOE. OE and MOE are asynchronous and drive the bus immediately.
)
Absolute Maximum Ratings
(Voltage reference to V
SS
= 0 V)
Symbol
Description
Note:
Permanent damage to the device may occur if the Absolute Maximun Ratings are exceeded. Functional operation should be restricted to the
recommended operation conditions. Exposure to higher than recommended voltages, for an extended period of time, could effect the
performance and reliability of this component.
Truth Table For Read/Write/Compare/Fill Write Operation
CE
Write
DE
MOE
OE
Match
DQ
Read
L
H
X
X
L
—
Q
Write
L
L
L
X
H
—
D
Compare
L
H
L
L
H
Data Out
D
Fill Write
L
L
H
X
X
—
X
Match Deselect
H
X
X
L
X
High
High Z
Deselect
H
X
X
H
X
High Z
High Z
Commerical
Unit
V
DD
Supply Voltage
–0.5 to 4.6
V
V
DDQ
Output Supply Voltage
–0.5 to V
DD
V
V
CLK
CLK Input Voltage
–0.5 to 6
V
V
in
Input Voltage
–0.5 to V
DD
+ 0.5
(
≤
4.6 V max. )
V
V
out
Output Voltage
–0.5 to V
DD
+ 0.5
(
≤
4.6 V max. )
V
I
out
Output Current per I/O
+/–20
mA
P
D
Power Dissipation
1.5
W
T
OPR
Operating Temperature
0 to 70
o
C
T
STG
Storage Temperature
–55 to 125
o
C
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| GS841E18AT-180I | 256K x 18 Sync Cache Tag |
| GS841Z18AGT-100 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-100I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GS841E18AT-180I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS841Z18AGT-100 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-100I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z18AGT-150I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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