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參數(shù)資料
| 型號： | GS841E18AT-180I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 18 Sync Cache Tag |
| 中文描述： | 256K X 18 CACHE TAG SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 11/21頁 |
| 文件大小： | 421K |
| 代理商： | GS841E18AT-180I |
GS841E18AT/B-180/166/150/130/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
11/21
2001, GSI Technology
DC Characteristics and Supply Currents
(Voltage reference to V
SS
= 0 V)
(VDD = 3.135 V–3.6 V, Ta = 0–70
°
C for Commercial Temperature Offering)
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except ZZ, FT, LBO pins)
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
ZZ Input Current
Iin
ZZ
V
DD
≥
V
IN
≥
V
IH
0 V
≤
V
IN
≤
V
IH
–1 uA
–1 uA
1 uA
300 uA
Mode Input Current
(FT & LBO pins)
Iin
M
V
DD
≥
V
IN
≥
V
IL
0 V
≤
V
IN
≤
V
IL
–30 0uA
–1 uA
1 uA
1 uA
Output Leakage Current
I
ol
Output Disable,
V
OUT
= 0 to V
DD
–1 uA
1 uA
Output High Voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 2.375 V
1.7 V
Output High Voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 3.135 V
2.4 V
Output Low Voltage
V
OL
I
OL
= +4 mA
0.4 V
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| GS841Z18AGT-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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