參數(shù)資料
型號(hào): GS8550BU
英文描述: TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
中文描述: 晶體管|晶體管|進(jìn)步黨| 25V的五(巴西)總裁| 800mA的一(c)|至226AA
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 19K
代理商: GS8550BU
GS8550xU
Vishay Semiconductors
formerly General Semiconductor
Document Number 88194
10-May-02
www.vishay.com
1
New Product
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
Complementary to GS8050xU
The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk
5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics
Ratings at 25
°
C ambient temperature unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
800
625
(1)
200
(1)
mA
Power Dissipation at T
amb
= 25
°
C
P
tot
mW
Thermal Resistance Junction to Ambient Air
R
θ
JA
°
C/W
Junction Temperature
T
j
150
°
C
Storage Temperature Range
T
S
55 to +150
°
C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
m
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches and (millimeters)
TO-226AA (TO-92)
相關(guān)PDF資料
PDF描述
GS8550CU TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
GS8550DU TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
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GS880Z18-11 Header; No. of Contacts:20; Pitch Spacing:0.079"; No. of Rows:2; Gender:Male; Series:1552; Body Material:Glass Filled Polyester; Connector Retention Style:Latch/Ejector; Contact Termination:Through Hole; Housing Style:Right-Angle RoHS Compliant: Yes
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