參數(shù)資料
型號： GS8550BU
英文描述： TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
中文描述： 晶體管|晶體管|進步黨| 25V的五（巴西）總裁| 800mA的一（c）|至226AA
文件頁數(shù)： 2/2頁
文件大?。?/td> 19K
代理商： GS8550BU
GS8550xU
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88194
10-May-02
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
V
CE
=
–
1V, I
C
=
–
5mA
45
135
—
Current Gain Group B
V
CE
=
–
1V, I
C
=
–
100mA
85
120
160
—
—
—
160
200
300
C
D
h
FE
—
V
CE
=
–
1V, I
C
=
–
800mA
—
30
—
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=
–
2mA, I
B
= 0
–
25
—
—
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=
–
100μA, I
E
= 0
–
40
—
—
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=
–
100μA, I
C
= 0
–
6
—
—
V
Collector Cut-off Current
I
CBO
V
CB
=
–
35V, I
E
= 0
—
—
–
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=
–
6V, I
C
= 0
—
—
–
100
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=
–
800mA, I
B
=
–
80mA
—
–
0.51
—
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=
–
800mA, I
B
=
–
80mA
—
–
1.25
—
V
Base-Emitter ON Voltage
V
BE(on)
V
CE
=
–
1V, I
C
=
–
10mA
—
–
0.66
–
1.0
V
Output Capacitance
C
OB
V
CB
=
–
10V, I
E
= 0
= 1 MHz
—
15
—
pF
Gain-Bandwidth Product
T
V
CE
=
–
10V, I
C
=
–
50mA
—
100
—
MHz
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