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參數(shù)資料

型號(hào)：	GS864418E-200
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述：	4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝：	15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)：	15/32頁
文件大小：	811K
代理商：	GS864418E-200

AC Electrical Characteristics

Parameter

Symbol

-250

-225

-200

-166

-150

-133

Unit

Min

4.0

—

1.0

1.0

1.3

0.2

6.5

—

3.0

3.0

1.5

0.5

1.3

1.5

Max

—

2.3

—

—

—

—

—

6.5

—

—

—

—

—

—

Min

4.4

—

1.0

1.0

1.3

0.3

6.5

—

3.0

3.0

1.5

0.5

1.3

1.5

Max

—

2.5

—

—

—

—

—

6.5

—

—

—

—

—

—

Min

5.0

—

1.0

1.0

1.4

0.4

6.5

—

3.0

3.0

1.5

0.5

1.3

1.5

Max

—

2.7

—

—

—

—

—

6.5

—

—

—

—

—

—

Min

6.0

—

1.0

1.0

1.5

0.5

7.0

—

3.0

3.0

1.5

0.5

1.3

1.5

Max

—

2.9

—

—

—

—

—

7.0

—

—

—

—

—

—

Min

6.7

—

1.0

1.0

1.5

0.5

7.5

—

3.0

3.0

1.5

0.5

1.5

1.7

Max

—

3.3

—

—

—

—

—

7.5

—

—

—

—

—

—

Min

7.5

—

1.0

1.0

1.5

0.5

8.5

—

3.0

3.0

1.5

0.5

1.7

2

Max

—

3.5

—

—

—

—

—

8.5

—

—

—

—

—

—

Pipeline

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

Clock to Output in Low-Z

Setup time

Hold time

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

Clock to Output in Low-Z

Setup time

Hold time

Clock HIGH Time

Clock LOW Time

Clock to Output in

High-Z

G to Output Valid

G to output in Low-Z

tKC

tKQ

tKQX

tLZ

1

tS

tH

tKC

tKQ

tKQX

tLZ

1

tS

tH

tKH

tKL

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Flow

Through

tHZ

1

1.0

2.3

1.0

2.5

1.0

2.7

1.0

2.9

1.0

3.0

1.0

3.0

ns

tOE

tOLZ

1

tOHZ

1

tZZS

2

tZZH

2

tZZR

—

0

2.3

—

—

0

2.5

—

—

0

2.7

—

—

0

2.9

—

—

0

3.3

—

—

0

3.5

—

ns

ns

G to output in High-Z

—

2.3

—

2.5

—

2.7

—

2.9

—

3.0

—

3.0

ns

ZZ setup time

5

—

5

—

5

—

5

—

5

—

5

—

ns

ZZ hold time

ZZ recovery

1

—

—

1

—

—

1

—

—

1

—

—

1

—

—

1

—

—

ns

ns

20

20

20

20

20

20

Preliminary

GS864418/36E-xxxV

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.05 6/2006

15/32

2003, GSI Technology

Notes:

1.

2.

These parameters are sampled and are not 100% tested.

ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

相關(guān)PDF資料	PDF描述
GS864418E-200I	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200IV	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200V	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I	4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS864418E-200I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-200IV	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200V	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs

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