參數(shù)資料
型號: GS864418GE-225IV
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 30/33頁
文件大?。?/td> 528K
代理商: GS864418GE-225IV
Mode Pin Functions
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
SCD
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07a 10/2009
6/33
2003, GSI Technology
Note:
There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above table.
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
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