參數(shù)資料
型號(hào)： GS8662S36BGD-300
廠商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
文件頁(yè)數(shù)： 36/37頁(yè)
文件大?。?/td> 748K
代理商： GS8662S36BGD-300
GS8662S08/09/18/36BD-400/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
8/37
2011, GSI Technology
Power-Up Sequence for SigmaSIO DDR-II SRAMs
SigmaSIO DDR-II SRAMs must be powered-up in a specific sequence in order to avoid undefined operations.
Power-Up Sequence
1. Power-up and maintain Doff at low state.
1a. Apply VDD.
1b. Apply VDDQ.
1c. Apply VREF (may also be applied at the same time as VDDQ).
2. After power is achieved and clocks (K, K, C, C) are stablized, change Doff to high.
3. An additional 2048 clock cycles are required to lock the DLL after it has been enabled.
Note:
If you want to tie Doff high with an unstable clock, you must stop the clock for a minimum of 30 ns to reset the DLL after
the clocks become stablized.
DLL Constraints
The DLL synchronizes to either K or C clock. These clocks should have low phase jitter (tKCVar in AC Characteristics
table).
The DLL cannot operate at a frequency lower than that specified by the tKHKH maximum specification for the desired
operating clock frequency.
If the incoming clock is not stablized when DLL is enabled, the DLL may lock on the wrong frequency and cause
undefined errors or failures during the initial stage.
Note:
If the frequency is changed, DLL reset is required. After reset, a minimum of 2048 cycles is required for DLL lock.
相關(guān)PDF資料
PDF描述
GS88036T-100T 256K X 36 CACHE SRAM, 12 ns, PQFP100
GS88037CT-250I 256K X 36 CACHE SRAM, 2.3 ns, PQFP100
GS880E18GT-66I 512K X 18 CACHE SRAM, 18 ns, PQFP100
GS880F18T-14T 512K X 18 CACHE SRAM, 14 ns, PQFP100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662S36E-167 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S36E-167I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S36E-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S36E-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S36E-250 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
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