參數(shù)資料
型號(hào)： GS88136BT-200
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
封裝： TQFP-100
文件頁數(shù)： 30/39頁
文件大小： 791K
代理商： GS88136BT-200
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
011
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
110
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
30/39
2002, GSI Technology
JTAG Port AC Test Conditions
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as shown unless otherwise noted.
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DDQ
/2
V
DDQ
/2
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
DQ
V
DDQ
/2
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
相關(guān)PDF資料
PDF描述
GS88136BT-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88136BT-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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