參數(shù)資料
型號: GS881E36BGT-250T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 11/39頁
文件大?。?/td> 815K
代理商: GS881E36BGT-250T
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04a 3/2009
19/39
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IIN1
VDD VIN VIH
0 V
VIN VIH
–1 uA
1 uA
100 uA
FT, SCD, ZQ Input Current
IIN2
VDD VIN VIL
0 V
VIN VIL
–100 uA
–1 uA
1 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH2
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
Output High Voltage
VOH3
IOH = –8 mA, VDDQ = 3.135 V
2.4 V
Output Low Voltage
VOL
IOL = 8 mA
0.4 V
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