參數(shù)資料
型號(hào)： GS88236BGB-200V
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 6.5 ns, PBGA119
封裝： ROHS COMPLIANT, FPBGA-119
文件頁(yè)數(shù)： 5/35頁(yè)
文件大?。?/td> 1164K
代理商： GS88236BGB-200V
GS88218/36B(B/D)-xxxV
Rev: 1.04 6/2007
13/35
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage on VDDQ Pins
–0.5 to VDD
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
VDD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.7
1.8
VDD
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
VDD
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料
PDF描述
GS88236BGB-250IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BGB-250V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88237AB-133 256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-133I 256K x 36 9Mb Synchronous Burst SRAMs
GS88237AB-150 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88236CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-200I 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays
GS88236CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays
GS88236CD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
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