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參數(shù)資料
| 型號(hào)： | GT28F320D18B120 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 58/83頁(yè) |
| 文件大?。?/td> | 836K |
| 代理商： | GT28F320D18B120 |
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28F320D18
54
Product Preview
DC Characteristics, continued
NOTE:
1. All currents are RMS unless noted. Typical values at typical V
CC
, T
A
= +25°C.
2. WAIT# I
LO
= 2 μA max.
3. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation.
4. The burst wrap bit (RCR.3) determines whether 4- or 8-word burst-accesses wrap within the burst-length
boundary or whether they cross word-length boundaries to perform linear accesses. In the no-wrap mode
(RCR.3 = 1), the device operates similar to continuous linear burst mode but consumes less power during 4-
and 8-word bursts.
5. Sampled, not 100% tested.
6. V
CC
read + program current is the summation of V
CC
Read and V
CC
program currents.
7. V
CC
read + program current is the summation of V
CC
Read and V
CC
block erase currents.
8. I
CCES
is specified with device deselected. If device is read while in erase suspend, current draw is sum of
I
CCES
and I
CCR
.
9. Erase and program operations are inhibited when V
PP
≤
V
PPLK
and not guaranteed outside valid V
PP1
and
V
PP2
ranges.
Sym
Parameter
(1)
Note
Min
Typ
Max
Unit
Test Condition
V
OL
Output Low Voltage
0.1
V
V
CC
= V
CC
Min, V
CCQ
= V
CCQ
Min, I
OL
=
100 μA
V
OH
Output High Voltage
V
- 0.1
V
V
CC
= V
CC
Min, V
CCQ
= V
CCQ
Min,
I
OH
= –100 μA
V
PPLK
V
PP
Lock-Out Voltage
9
0.4
V
V
LKO
V
CC
Lock Voltage
1.0
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GT28F320S3-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile⑩ MEMORY FAMILY |
| GT28F320S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| GT28F320W18BC60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
| GT28F320W18BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel? Wireless Flash Memory |
| GT28F320W18BD60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel㈢ Wireless Flash Memory |
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