參數(shù)資料
型號(hào)： GTT8209E
廠商： GTM CORPORATION
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 2/4頁
文件大?。?/td> 327K
代理商： GTT8209E
GTT8209E
Page: 2/4
ISSUED DATE :2006/08/08
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.5
-
1.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
24
-
S
VDS=5V, ID=7A
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ±10V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=16V, VGS=0
Drain-Source Leakage Current(Tj=55 : )
IDSS
-
5
uA
VDS=16V, VGS=0
-
21
VGS=10V, ID=7.0A
-
24
VGS=4.5V, ID=6.6A
-
32
VGS=2.5V, ID=5.5A
Static Drain-Source On-Resistance
RDS(ON)
-
50
m
VGS=1.8V, ID=2.0A
Total Gate Charge2
Qg
-
9.3
-
Gate-Source Charge
Qgs
-
0.6
-
Gate-Drain (“Miller”) Change
Qgd
-
3.6
-
nC
ID=7A
VDS=10V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
5.7
-
Rise Time
Tr
-
11.5
-
Turn-off Delay Time
Td(off)
-
31.5
-
Fall Time
Tf
-
9.7
-
ns
VDS=10V
VGS=5V
RG=3
RL=1.4
Input Capacitance
Ciss
-
630
Output Capacitance
Coss
-
164
-
Reverse Transfer Capacitance
Crss
-
137
-
pF
VGS=0V
VDS=10V
f=1.0MHz
Gate Resistance
Rg
-
1.5
-
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.0
V
IS=1.0A, VGS=0V
Reverse Recovery Time2
Trr
-
15.2
-
ns
Reverse Recovery Charge
Qrr
-
6.3
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
2.5
A
VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec; 180 : /W when mounted on Min. copper pad.
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