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參數(shù)資料
| 型號(hào)： | H26259 |
| 英文描述： | Operational Amplifier |
| 中文描述： | 運(yùn)算放大器 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 391K |
| 代理商： | H26259 |
7
Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
1750
μ
m x 1420
μ
m
x 483
μ
m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
±
2k
SUBSTRATE POTENTIAL (POWERED UP):
Unbiased
PASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos.)
Silox Thickness: 12k
±
2k
Nitride Thickness: 3.5k
±
1.5k
TRANSISTOR COUNT:
140
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2620, HA-2625
BAL
-IN
+IN
V-
BAL
OUT
V+
COMP
HA-2620, HA-2625
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