| 型號 | 廠商 | 描述 |
| h1n5822 2 3 |
Schottky Barrier Diodes | |
| h225ac 2 3 4 5 6 7 8 9 10 |
Surface Acoustic Wave Filter | |
| h23b1 2 |
Electronic Theatre Controls, Inc. | MATCHED EMITTER DETECTOR PAIR |
| h2476-01 2 3 4 5 6 7 8 |
OPTICAL RANGE FINDING CIRCUIT|QFI|44PIN|PLASTIC | |
| h25295 2 3 4 5 6 7 8 |
Intersil Corporation | 20MHz, High Input Impedance, High Slew Rate Operational Amplifier |
| h26259 2 3 4 5 6 7 8 9 10 |
Operational Amplifier | |
| h4244c 2 3 4 5 6 |
Intersil Corporation | 480MHz, 1 x 1 Video Crosspoint Switch with Synchronous Enable |
| h4ep012-die 2 3 4 5 6 |
ASIC | |
| h4ep017-die 2 3 4 5 6 |
ASIC | |
| h4ep044-die 2 3 4 5 6 |
ASIC | |
| h4ep116-die 2 3 4 5 6 |
ASIC | |
| h4ep171-die 2 3 4 5 6 |
ASIC | |
| h4ep227-die 2 3 4 5 6 |
ASIC | |
| h4ep278-die 2 3 4 5 6 |
ASIC | |
| h5004 2 3 4 |
1000Base-T Magnetics Modules Designed to Support 1:1 Turns Ratio Transceivers (11/02) | |
| h5007 2 3 4 |
1000Base-T Magnetics Modules Designed to Support 1:1 Turns Ratio Transceivers (11/02) | |
| h5008 2 |
1000Base-T Magnetics Modules Designed to Support 1:1 Turns Ratio Transceivers (10/02) | |
| h5009 2 |
1000Base-T Magnetics Modules Designed to Support 1:1 Turns Ratio Transceivers (10/02) | |
| h5009-5012 2 3 |
Intersil Corporation | Virtual Ground Analog Switch |
| h5012 2 3 4 |
1000Base-T Dual Port Magnetic Modules Designed to Support 1:1 Turns Ratio Transceivers (8/02) | |
| h5014 2 3 4 |
1000Base-T Dual Port Magnetic Modules Designed to Support 1:1 Turns Ratio Transceivers (8/02) | |
| h5020 2 3 4 |
1000Base-T Dual Port Magnetic Modules Designed to Support 1:1 Turns Ratio Transceivers (8/02) | |
| h5019 2 |
1000Base-T Low Profile Magnetics Module Designed to Support 1:1 Turns Ratio Transceivers (8/02) | |
| h510 |
Interface IC | |
| h5c6 |
Peripheral IC | |
| h5n0301sm 2 3 4 5 |
||
| h5n1503p 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n1503p-e 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2004dl 2 3 4 5 6 7 8 9 10 11 12 |
Datasheet|ADE-208-1372|MAR.20.01|58K | |
| h5n2004ds 2 3 4 5 6 7 8 9 10 11 12 |
Datasheet|ADE-208-1372|MAR.20.01|58K | |
| h5n2007fn 2 3 4 5 6 7 8 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2007fn-e 2 3 4 5 6 7 8 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2008p 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2305pf 2 3 4 5 6 7 8 9 10 |
Renesas Technology Corp. | Silicon N Channel MOSFET High Speed Power Switching |
| h5n2305pf-e 2 3 4 5 6 7 8 9 10 |
Renesas Technology Corp. | Silicon N Channel MOSFET High Speed Power Switching |
| h5n2503p 2 3 4 5 6 7 8 9 10 |
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| h5n2504dl 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1375A|JUN.11.02|102K | |
| h5n2504ds 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1375A|JUN.11.02|102K | |
| h5n2505dl 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1376|MAR.20.01|34K | |
| h5n2505ds 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1376|MAR.20.01|34K | |
| h5n2508dl 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1377|MAR.20.01|58K | |
| h5n2508ds 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1377|MAR.20.01|58K | |
| h5n2510dl 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1379|MAR.20.01|35K | |
| h5n2510ds 2 3 4 5 6 7 8 9 10 |
Datasheet|ADE-208-1379|MAR.20.01|35K | |
| h5n2519p 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2519p-e 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2522fn 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2522fn-e-t2 2 3 4 5 6 7 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2901fn 2 3 4 5 6 7 8 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |
| h5n2901fn-e 2 3 4 5 6 7 8 |
Renesas Technology Corp. | Silicon N Channel MOS FET High Speed Power Switching |