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參數(shù)資料
| 型號(hào)： | H5N0301SM |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | H5N0301SM |
H5N0301SM
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
Pch
(pulse)
Tch
30
V
Gate to source voltage
±
10
V
Drain current
50
mA
Drain peak current
Note 1
200
mA
Channel dissipation
Note 2
100
mW
Channel temperature
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
10
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
8 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 10
μ
A, V
DS
= –5 V
I
D
=25m A, V
GS
=4 V
Note 1
I
D
=10mA,V
GS
=2.5 V
Note 1
I
D
=25mA,,V
DS
=10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltege drain current I
DSS
Gate to source cutoff voltage
—
—
1
V
GS(off)
R
DS(on)
0.8
—
1.8
V
Static drain to source on state
—
6
7.2
resistance
—
9
13
Forward transfer admittance
|y
fs
|
Ciss
65
85
—
mS
Input capacitance
—
12
—
pF
Output capacitance
Coss
—
8
—
pF
Reverse transfer capacitance
Crss
—
3
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
40
—
ns
V
GS
= 4 V, I
D
= 25m A
R
L
= 400
Rise time
—
115
—
ns
Turn-off delay time
—
120
—
ns
Fall time
—
125
—
ns
Body–drain diode forward
voltage
Note:
1. Pulse test
—
0.82
1.23
V
I
F
= 50m A, V
GS
= 0
Note 1
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