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參數(shù)資料
| 型號(hào)： | H5N1503P-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 87K |
| 代理商： | H5N1503P-E |
H5N1503P
Rev.1.00, Mar.10.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Min
150
—
—
3.0
27
—
Typ
—
—
—
—
46
0.022
Max
—
1
±0.1
4.0
—
0.027
Unit
V
μ
A
μ
A
V
S
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 35 A, V
DS
= 10 V
Note4
I
D
= 35 A, V
GS
= 10 V
Note4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
5100
770
140
60
290
200
190
135
30
60
1.1
180
1.2
—
—
—
—
—
—
—
—
—
—
1.7
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 35 A
V
GS
= 10 V
R
L
= 2.14
Rg = 10
V
DD
= 120 V
V
GS
= 10 V
I
D
= 70 A
I
F
= 70 A, V
GS
= 0
Note4
I
F
= 70 A, V
GS
= 0
diF/dt = 100 A/
μ
s
相關(guān)PDF資料 |
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| H5N2004DL | Datasheet|ADE-208-1372|MAR.20.01|58K |
| H5N2004DS | Datasheet|ADE-208-1372|MAR.20.01|58K |
| H5N2007FN | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N1506P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N1506P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2001LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2001LD-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2001LM | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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