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參數(shù)資料
| 型號(hào)： | H5N2004DL |
| 英文描述： | Datasheet|ADE-208-1372|MAR.20.01|58K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1372 | MAR.20.01 | 5.8萬(wàn) |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | H5N2004DL |
H5N2004DL, H5N2004DS
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±0.1
μA
V
GS
= ±30 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 4 A, V
GS
= 10 V
Note 4
Zero gate voltage drain current
—
—
1
μA
Gate to source cutoff voltage
3.0
—
4.5
V
Static drain to source on state
resistance
—
0.38
0.48
Forward transfer admittance
|y
fs
|
Ciss
3.3
5.5
—
S
I
D
= 4 A, V
DS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
450
—
pF
Output capacitance
Coss
—
65
—
pF
Reverse transfer capacitance
Crss
—
13
—
pF
Turn-on delay time
td(on)
—
19
—
ns
I
D
= 4 A
V
GS
= 10 V
R
L
= 25
Rg = 10
Rise time
tr
—
32
—
ns
Turn-off delay time
td(off)
—
47
—
ns
Fall time
tf
—
10
—
ns
Total gate charge
Qg
—
14
—
nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 4 A
I
F
= 8 A, V
GS
= 0
Gate to source charge
Qgs
—
2.5
—
nC
Gate to drain charge
Qgd
—
7.5
—
nC
Body-drain diode forward
voltage
V
DF
—
0.9
1.4
V
Body-drain diode reverse
recovery time
trr
—
100
—
ns
I
F
= 8 A, V
GS
= 0
Body-drain diode reverse
recovery charge
Note:
4. Pulse test
Qrr
—
0.4
—
μC
diF/dt = 50 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H5N2004DS | Datasheet|ADE-208-1372|MAR.20.01|58K |
| H5N2007FN | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2007FN-E | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2008P | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2305PF | Silicon N Channel MOSFET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2004DL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2004DS | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2004DSTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DL | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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