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參數(shù)資料
| 型號： | H5N2007FN-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 105K |
| 代理商： | H5N2007FN-E |
H5N2007FN
Rev.1.00, May.28.2004, page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Min
200
—
—
3.0
13
—
Typ
—
—
—
—
22
0.036
Max
—
1
±0.1
4.0
—
0.047
Unit
V
μ
A
μ
A
V
S
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12.5 A, V
DS
= 10 V
Note4
I
D
= 12.5 A, V
GS
= 10 V
Note4
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
2200
410
54
35
120
110
85
56
13
26
0.9
140
0.7
—
—
—
—
—
—
—
—
—
—
1.5
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 12.5 A
V
GS
= 10 V
R
L
= 8
Rg = 10
V
DD
= 160 V
V
GS
= 10 V
I
D
= 25 A
I
F
= 25 A, V
GS
= 0
Note4
I
F
= 25 A, V
GS
= 0
diF/dt = 100 A/
μ
s
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