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參數資料
| 型號： | H5N2508DS |
| 英文描述： | Datasheet|ADE-208-1377|MAR.20.01|58K |
| 中文描述： | 技術資料|腺- 208 - 1377 | MAR.20.01 | 5.8萬 |
| 文件頁數： | 5/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | H5N2508DS |
H5N2503P
Rev.1, Jun. 2002, page 5 of 10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
4
3
2
1
0
4
8
12
16
20
1
5
20
100
2
10
50
200
100
50
20
10
200
160
120
80
40
–
40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
5
25
°
C
Tc =
–
25
°
C
75
°
C
V = 10 V
10 A
25 A
I = 50 A
I = 50 A
25 A
10 A
V = 10 V, 15 V
Pulse Test
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
Case Temperature Tc (
°
C)
S
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V = 10 V
Pulse Test
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|---|---|
| H5N2510DL | Datasheet|ADE-208-1379|MAR.20.01|35K |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| H5N2508DSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2509P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2509P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P |
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| H5N2510DL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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