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參數(shù)資料
| 型號： | H5N3003 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 133K |
| 代理商： | H5N3003 |
H5N3003P
Rev.2.00, Aug.01.2003, page 3 of 9
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
300
—
—
V
μ
A
μ
A
V
I
D
= 10mA, V
GS
= 0
Zero gate voltage drain current
I
DSS
—
—
1
V
DS
= 300V, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±0.1
V
GS
= ±30V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0
—
4.0
V
DS
= 10V, I
D
= 1mA
I
D
= 20A, V
DS
= 10V
Note4
I
D
= 20A, V
GS
= 10V
Note4
Forward transfer admittance
|y
fs
|
20
35
—
S
Static drain to source on state
resistance
R
DS(on)
—
0.058
0. 069
Input capacitance
Ciss
—
5150
—
pF
V
DS
= 25V
Output capacitance
Coss
—
560
—
pF
V
GS
= 0
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1MHz
Turn-on delay time
td(on)
—
60
—
ns
I
D
= 20A
R
L
= 7.5
V
GS
= 10V
Rg=10
V
DD
= 240V
Rise time
tr
—
185
—
ns
Turn-off delay time
td(off)
—
220
—
ns
Fall time
tf
—
150
—
ns
Total gate charge
Qg
—
130
—
nC
Gate to source charge
Qgs
—
25
—
nC
V
GS
= 10V
Gate to drain charge
Qgd
—
60
—
nC
I
D
= 40A
Body–drain diode forward voltage
V
DF
—
1.0
1.5
V
I
F
= 40A, V
GS
= 0
Body–drain diode reverse recovery
time
trr
—
280
—
ns
I
F
= 40A, V
GS
= 0
diF/dt=100A/
μ
s
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
2.5
—
μ
C
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| H5N3003P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| H5N3005LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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