參數(shù)資料
型號: H5N3003
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 4/10頁
文件大小: 133K
代理商: H5N3003
H5N3003P
Rev.2.00, Aug.01.2003, page 4 of 9
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.3
0.1
1000
Ta = 25
°
C
10 V
8 V
V
GS
= 5 V
5.5 V
Tc = 75
°
C
25
°
C
–25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
100
PW=10ms(1sho)
DCOpeaion(Tc=25
°
C
this area is
limited by R
DS(on)
10
μ
s
6 V
7 V
Operation in
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
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