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參數(shù)資料
| 型號： | H5N3004P |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | H5N3004P |
H5N3004P
Rev.0, Apr. 2002, page 2 of 10
Absolute Maximum Ratings
(Ta=25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
I
DR
I
DR
(pulse)
300
±
30
V
Gate to source voltage
V
Drain current
25
A
Drain peak current
Note
1
100
A
Body-drain diode reverse drain current
25
A
Body-drain diode reverse drain peak
current
Note
1
100
A
Avalanche current
I
AP
Pch
θ
ch-c
Tch
Note
3
25
A
Channel dissipation
Note
2
150
W
°
C/W
°
C
°
C
Channel to case Thermal impedance
0.833
Channel temperature
150
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Tstg
–55 to +150
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| H5N3004P_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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