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參數(shù)資料
| 型號： | H5N3004P |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | H5N3004P |
H5N3004P
Rev.0, Apr. 2002, page 3 of 10
Electrical Characteristics
(Ta=25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
300
—
V
μ
A
μ
A
V
I
D
= 10 mA, V
GS
= 0
V
DS
= 300 V, V
GS
= 0
V
GS
= ±30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12.5 A, V
DS
= 10 V
I
D
= 12.5 A, V
GS
= 10 V
Zero gate voltage drain current
—
1
Gate to source leak current
—
±0.1
Gate to source cutoff voltage
3.0
4.0
Forward transfer admittance
15
25
—
S
Note
4
Static drain to source on state
resistance
—
0.076
0. 093
Note
4
Input capacitance
Ciss
—
3600
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Output capacitance
Coss
—
400
pF
Reverse transfer capacitance
Crss
—
100
pF
Turn-on delay time
td(on)
—
50
ns
I
D
= 12.5 A
R
L
= 12
V
GS
= 10 V
Rg = 10
V
DD
= 240 V
V
GS
= 10 V
I
D
= 25 A
I
F
= 25 A, V
GS
= 0
I
= 25 A, V
= 0
diF/dt = 100 A/
μ
s
Rise time
tr
—
120
—
ns
Turn-off delay time
td(off)
—
180
ns
Fall time
tf
—
90
—
ns
Total gate charge
Qg
—
110
—
nC
Gate to source charge
Qgs
—
18
—
nC
Gate to drain charge
Qgd
—
55
—
nC
Body-drain diode forward voltage
V
DF
trr
—
0.9
1.35
V
Body-drain diode reverse recovery
time
—
250
—
ns
Body-drain diode reverse recovery
charge
Qrr
—
2.3
—
μ
C
Notes: 4. Pulse test
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