參數(shù)資料
型號: H5N5006FM
英文描述: Datasheet|ADE-208-1112|MAR.20.01|50K
中文描述: 技術(shù)資料|腺- 208 - 1112 | MAR.20.01 | 5萬
文件頁數(shù): 7/10頁
文件大?。?/td> 49K
代理商: H5N5006FM
H5N5001FM
7
0
0.4
0.8
1.2
1.6
2.0
10
8
6
4
2
V = 0 V
5, 10 V
5
4
3
2
1
-50
0
Case Temperature Tc (°C)
50
100
150
200
0
I = 10mA
1mA
0.1mA
V = 10 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 250 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
G
G
Gate to Source Cutoff Voltage
vs. Case Temperature
Waveform
Switching Time Test Circuit
相關(guān)PDF資料
PDF描述
H5N5007P
H5N5015P
H5N6001P
H5P0301SM
H7N0203AB Silicon N Channel MOS FET High Speed Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5N5006FM-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N5006LD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N5006LD-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N5006LM 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching