參數(shù)資料
型號(hào): H7N0203AB
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 123K
代理商: H7N0203AB
H7N0203AB
Rev.3, Aug. 2002, page 5 of 10
1
100
10
1000
10
1
8
6
4
2
25
0
Case Temparature Tc (
°
C)
25
50
75
100
125 150
0
0.01
100
10
1000
100
1
10
0.1
0.1
Drain Current I (A)
1
Static Drain to Source on State Resistance
vs. Drain Current
25
°
C
Tc =
25
°
C
75
°
C
V = 10 V
Pulse Test
V = 10 V
V = 4.5 V
Pulse Test
I = 10, 20, 50 A
I = 10, 20 A
I = 50 A
Drain Current I (A)
D
R
D
Pulse Test
V
GS
= 4.5 V
10 V
(
)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
S
(
)
R
D
|
F
0.3
0.2
0.1
0
4
8
12
20
16
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
0.4
Gate to Source Voltage V (V)
V
D
D
I = 50 A
20 A
10 A
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H7N0203AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0203AB-E 制造商:Renesas Electronics Corporation 功能描述:
H7N0307AB 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB