參數(shù)資料
型號: H7N0203AB
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 9/12頁
文件大?。?/td> 123K
代理商: H7N0203AB
H7N0203AB
Rev.3, Aug. 2002, page 7 of 10
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = 1
L
I
2
V
V
V
DSS
DD
2
50
40
30
20
10
25
50
75
100
125
150
0
I = 20 A
V = 10 V
duty < 0.1 %
Rg > 50
Channel Temperature Tch (
°
C)
R
A
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
V = 0, -5 V
5V
Pulse Test
10 V
Reverce Drain Current vs.
Source to Drain Voltage
R
F
Source Drain Voltage V (V)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H7N0203AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0203AB-E 制造商:Renesas Electronics Corporation 功能描述:
H7N0307AB 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB