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參數(shù)資料
| 型號(hào)： | H7N0308AB |
| 英文描述： | Datasheet|ADE-208-1569B|AUG.07.02|121K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1569B | AUG.07.02 | 121K |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | H7N0308AB |
H7N0308AB
Rev.2, Aug. 2002, page 3 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 35 A, V
GS
= 10 V
I
D
= 35 A, V
GS
= 4.5 V
I
D
= 35 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1MHz
Gate to source breakdown voltage
±20
—
—
Gate to source leak current
—
—
±10
μ
A
μ
A
V
m
m
S
Zero gate voltage drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
Note 1
Static drain to source on state
—
3.8
4.8
Note 1
resistance
—
8.5
Note 1
Forward transfer admittance
|y
fs
|
Ciss
54
90
—
Note 1
Input capacitance
—
3350
—
pF
Output capacitance
Coss
—
840
—
pF
Reverse transfer capacitance
Crss
—
480
—
pF
Total gate charge
Qg
—
52
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 70 A
V
GS
= 10 V, I
D
= 35 A
R
L
=0.29
R
g
=4.7
Gate to source charge
Qgs
—
11
—
nc
Gate to drain charge
Qgd
—
10
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
30
—
ns
Rise time
—
370
—
ns
Turn-off delay time
—
80
—
ns
Fall time
—
27
—
ns
Body–drain diode forward voltage
—
0.93
—
V
I
F
= 70 A, V
GS
= 0
I
= 70 A, V
= 0
diF/ dt =50 A/μs
Body–drain diode reverse recovery
time
—
60
—
ns
Notes: 1. Pulse test
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