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參數(shù)資料
| 型號： | H7N0308AB |
| 英文描述： | Datasheet|ADE-208-1569B|AUG.07.02|121K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1569B | AUG.07.02 | 121K |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 121K |
| 代理商： | H7N0308AB |
H7N0308AB
Rev.2, Aug. 2002, page 4 of 9
Main Characteristics
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
100
80
60
40
20
0
2
4
6
8
10
100
80
60
40
20
0
1
2
3
4
5
Tc = 75
°
C
25
°
C
-25
°
C
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
V = 10 V
Pulse Test
500
Tc = 25
°
C
1 shot Pulse
PW=10ms
10
μ
s
100
μ
s
Operation in
this area is
limited by R
DS(on)
DCOperaion
1ms
V = 2.5 V
10V
4.5 V
3.5 V
Pulse Test
3 V
160
120
80
40
0
50
100
150
200
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
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| H7N0308AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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