- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371760 > H7N0310LM (Renesas Technology Corp.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號： | H7N0310LM |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 131K |
| 代理商： | H7N0310LM |
H7N0310LD, H7N0310LS, H7N0310LM
Rev.3, Aug. 2002, page 3 of 3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V
I
D
= 15 A, V
GS
= 5 V
I
D
= 15 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±20
—
—
μ
A
μ
A
V
m
m
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±10
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
Note1
Static drain to source on state
—
8.0
10
Note1
resistance
—
13
19
Note1
Forward transfer admittance
|y
fs
|
Ciss
21
35
—
Note1
Input capacitance
—
1400
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
210
—
pF
Total gate charge
Qg
—
24
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
R
L
= 0.67
R
g
= 4.7
Gate to source charge
Qgs
—
4.8
—
nc
Gate to drain charge
Qgd
—
4.6
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
21
—
ns
Rise time
—
250
—
ns
Turn-off delay time
—
55
—
ns
Fall time
—
16
—
ns
Body
–
drain diode forward voltage
—
0.90
—
V
I
F
= 30 A, V
GS
= 0
I
= 30 A, V
= 0
diF/ dt = 50 A/
μ
s
Body
–
drain diode reverse recovery
time
—
35
—
ns
Notes: 1. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0310LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LS | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0310LMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。