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參數(shù)資料
| 型號： | H7N0310LM |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 131K |
| 代理商： | H7N0310LM |
H7N0310LD, H7N0310LS, H7N0310LM
Rev.3, Aug. 2002, page 6 of 6
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
50
40
30
20
10
0
20
16
12
8
4
8
16
24
32
40
0
I = 30 A
V
GS
V
DS
V = 25 V
10 V
5 V
V = 25 V
10 V
5 V
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
0.1
0.3
1
3
10
30
100
1000
500
100
200
20
50
10
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
Reverse Drain Current I (A)
R
Body-Drain Diode Reverse
Recovery Time
100
200
20
10
0.1 0.2
2
10
100
20
1
Drain Current I (A)
S
Switching Characteristics
0.5
5
500
50
50
5
V = 10 V, V = 10 V
Rg = 4.7 , duty < 1 %
r
d(on)
t
d(off)
t
tf
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0310LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LS | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0310LMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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