- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371760 > H7N0310LS (Renesas Technology Corp.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | H7N0310LS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | H7N0310LS |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
H7N0310LD, H7N0310LS, H7N0310LM
Rev.3, Aug. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
30
V
Gate to source voltage
±20
V
Drain current
30
A
Drain peak current
Note 1
120
A
Body-drain diode reverse drain current I
DR
Channel dissipation
30
A
Pch
θ
ch-c
Tch
Note 2
50
W
Channel to Case Thermal Impedance
2.5
°C/W
Channel temperature
150
°C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LD | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0310LSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 45A 3-Pin(3+Tab) LDPAK(L) |
| H7N0311LMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。