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參數(shù)資料
| 型號： | H7N0310LS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 131K |
| 代理商： | H7N0310LS |
H7N0310LD, H7N0310LS, H7N0310LM
Rev.3, Aug. 2002, page 5 of 5
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Case Temperature Tc (
°
C)
S
Static Drain to Source on State Resistance
vs. Temperature
40
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.5
0.4
0.3
0.2
0.1
0
4
8
12
16
20
20
10
2
5
1
0.1
0.5
2
5
20
50
32
24
16
8
40
0
40
80
120
160
0
Pulse Test
I = 20 A
5 A
10 A
1
10
100
0.2
50
V = 5 V
10 V
R
D
I = 5 A, 10 A
D
5 A, 10 A, 20 A
V = 5 V
10 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc =
25
°
C
V = 10 V
Pulse Test
75
°
C
25
°
C
20 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0608LD | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0310LSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0311LD-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 45A 3-Pin(3+Tab) LDPAK(L) |
| H7N0311LMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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